An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser
文献类型：期刊论文
| 作者 | Wang Jun; Wang Jun; Wang Guan
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2009 |
| 卷号 | 30期号:6页码:64-67 |
| 中文摘要 | A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE. |
| 学科主题 | 半导体器件 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15755]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Jun,Wang Jun,Wang Guan. An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser[J]. 半导体学报,2009,30(6):64-67. |
| APA | Wang Jun,Wang Jun,&Wang Guan.(2009).An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser.半导体学报,30(6),64-67. |
| MLA | Wang Jun,et al."An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser".半导体学报 30.6(2009):64-67. |
入库方式： OAI收割
来源：半导体研究所
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