Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell
文献类型：期刊论文
| 作者 | Liu Shiyong ; Peng Wenbo
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2009 |
| 卷号 | 30期号:6页码:25-28 |
| 中文摘要 | boron-doped hydrogenated silicon films with different gaseous doping ratios (b_2h_6/sih_4) were deposited in a plasma-enhanced chemical vapor deposition (pecvd) system. the microstructure of the films was investigated by atomic force microscopy (afm) and raman scattering spectroscopy. the electrical properties of the films were characterized by their room temperature electrical conductivity (σ) and the activation energy (e_a). the results show that with an increasing gaseous doping ratio, the silicon films transfer from a microcrystalline to an amorphous phase, and corresponding changes in the electrical properties were observed. the thin boron-doped silicon layers were fabricated as recombination layers in tunnel junctions. the measurements of the ⅰ-ⅴ characteristics and the transparency spectra of the junctions indicate that the best gaseous doping ratio of the recombination layer is 0.04, and the film deposited under that condition is amorphous silicon with a small amount of crystallites embedded in it. the junction with such a recombination layer has a small resistance, a nearly ohmic contact, and a negligible optical absorption. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | the state key development program for basic research of china,the national natural science foundation of china,the national high technology research and development program of china |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15759]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu Shiyong,Peng Wenbo. Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell[J]. 半导体学报,2009,30(6):25-28. |
| APA | Liu Shiyong,&Peng Wenbo.(2009).Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell.半导体学报,30(6),25-28. |
| MLA | Liu Shiyong,et al."Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell".半导体学报 30.6(2009):25-28. |
入库方式： OAI收割
来源：半导体研究所
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