NiO removal of Ni/Au Ohmic contact to p-GaN after annealing
文献类型：期刊论文
| 作者 | Yan Tingjing ; Chen Lianghui; Zhang Shuming
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2009 |
| 卷号 | 30期号:2页码:101-104 |
| 中文摘要 | the ni/au contact was treated with oxalic acid after annealing in o_2 ambient, and its i-v characteristic showed the property of contact has been obviously improved. an auger electron spectroscopy (aes) depth pro-file of the contact as-annealed showed that the top layer was highly resistive nio, while an x-ray photo-electron spectroscopy (xps) of oxalic acid treated samples indicated that the nio has been removed effectively. a scanning electron microscope (sem) was used to observe the surface morphology of the contacts, and it was found that the lacunaris surface right after annealing became quite smooth with lots of small au exposed areas after oxalic acid treatment. when the test probe or the subsequently deposited ti/au was directly in contact with these small au areas, they worked as low resistive current paths and thus decrease the specific contact resistance. |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | supported by the national natural science foundation of china |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15767]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yan Tingjing,Chen Lianghui,Zhang Shuming. NiO removal of Ni/Au Ohmic contact to p-GaN after annealing[J]. 半导体学报,2009,30(2):101-104. |
| APA | Yan Tingjing,Chen Lianghui,&Zhang Shuming.(2009).NiO removal of Ni/Au Ohmic contact to p-GaN after annealing.半导体学报,30(2),101-104. |
| MLA | Yan Tingjing,et al."NiO removal of Ni/Au Ohmic contact to p-GaN after annealing".半导体学报 30.2(2009):101-104. |
入库方式： OAI收割
来源：半导体研究所
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