中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD

文献类型:期刊论文

作者FAN Haibo
刊名人工晶体学报
出版日期2008
卷号37期号:6页码:1401-1405
中文摘要zno nanorod arrays with different morphologies were grown by metalorganic chemical vapor deposition (mocvd). the diameters of nanorods range from 150 nm to 20 nm through changing the carrier gas flux during the growth process. measurements such as scanning electron microscope (sem), x-ray diffraction (xrd), raman scattering and photoluminescence (pl) spectrum were employed to analyze the differences of these nanorods. it was found that when both carrier gas flux of zn and o reactant are 1 slm, we can obtain the best vertically aligned and uniform nanorods. furthermore, the pl spectrum reveals a blueshift of uv emission peak, which may be assigned to the increase of surface effect.
学科主题半导体材料
收录类别CSCD
资助信息project supported by the special funds for major state basic research project(973 program )of china( no. 2 6cb6 49 7)
语种英语
公开日期2010-11-23
源URL[http://ir.semi.ac.cn/handle/172111/15893]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
FAN Haibo. Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD[J]. 人工晶体学报,2008,37(6):1401-1405.
APA FAN Haibo.(2008).Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD.人工晶体学报,37(6),1401-1405.
MLA FAN Haibo."Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD".人工晶体学报 37.6(2008):1401-1405.

入库方式: OAI收割

来源:半导体研究所

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