Growth of SiGe by D-UHV/CVD at Low Temperature
文献类型：期刊论文
| 作者 | Zeng Yugang ; Han Genquan ; Yu Jinzhong |
| 刊名 | 半导体学报
 |
| 出版日期 | 2008 |
| 卷号 | 29期号:10页码:1889-1892 |
| 中文摘要 | the temperature is a key factor for the quality of the sige alloy grown by d-uhv/cvd. in conventional conditions,the lowest temperature for sige growth is about 550℃. generally, the pressure of the growth chamber is about 10~(-5) pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas. we have succeeded in depositing sige films at much lower temperature using a novel method. it is about 10.2 pa without liquid nitrogen, about 3 magnitudes higher than the traditional method,leading to much faster deposition rate. without liquid nitrogen,the sige film and sige/si superlattice are grown at 485℃. the dcxrd curves and tem image show that the quality of the film is good. the experiments show that this method is efficient to deposit sige at low temperature. |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家自然科学基金（批准号 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15945]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zeng Yugang,Han Genquan,Yu Jinzhong. Growth of SiGe by D-UHV/CVD at Low Temperature[J]. 半导体学报,2008,29(10):1889-1892. |
| APA | Zeng Yugang,Han Genquan,&Yu Jinzhong.(2008).Growth of SiGe by D-UHV/CVD at Low Temperature.半导体学报,29(10),1889-1892. |
| MLA | Zeng Yugang,et al."Growth of SiGe by D-UHV/CVD at Low Temperature".半导体学报 29.10(2008):1889-1892. |
入库方式： OAI收割
来源：半导体研究所
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