A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design
文献类型：期刊论文
| 作者 | Zhang Yang ; Zhang Renping
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2008 |
| 卷号 | 29期号:9页码:1654-1656 |
| 中文摘要 | we propose and fabricate an a1gan/gan high electron mobility transistor （hemt） on sapphire substrate using a new kind of electron beam （eb） lithography layout for the t-gate. using this new layout,we can change the aspect ratio （ratio of top gate dimension to gate length） and modify the shape of the t-gate freely. therefore, we obtain a 0.18μm gate-length algan/gan hemt with a unity current gain cutoff frequency （f_t） of 65ghz. the aspect ratio of the t-gate is 10. these single finger devices also exhibit a peak extrinsic transconductance of 287ms/mm and a maximum drain current as high as 980ma/mm. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15963]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang Yang,Zhang Renping. A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design[J]. 半导体学报,2008,29(9):1654-1656. |
| APA | Zhang Yang,&Zhang Renping.(2008).A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design.半导体学报,29(9),1654-1656. |
| MLA | Zhang Yang,et al."A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design".半导体学报 29.9(2008):1654-1656. |
入库方式： OAI收割
来源：半导体研究所
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