Effect of Surface Potential Barrier on the Electron Energy Distribution of NEA Photocathodes
文献类型：期刊论文
| 作者 | Zou Jijun ; Yang Zhi ; Qiao Jianliang ; Chang Benkang ; Zeng Yiping |
| 刊名 | 半导体学报
 |
| 出版日期 | 2008 |
| 卷号 | 29期号:8页码:1479-1483 |
| 中文摘要 | by calculating the energy distribution of electrons reaching the photocathode surface and solving the schrodinger equation that describes the behavior of an electron tunneling through the surface potential barrier,we obtain an equation to calculate the emitted electron energy distribution of transmission-mode nea gaas photocathodes. accord- ing to the equation,we study the effect of cathode surface potential barrier on the electron energy distribution and find a significant effect of the barrier-ⅰ thickness or end height,especially the thickness,on the quantum efficiency of the cath- ode. barrier ⅱ has an effect on the electron energy spread, and an increase in the vacuum level will lead to a narrower electron energy spread while sacrificing a certain amount of cathode quantum efficiency. the equation is also used to fit the measured electron energy distribution curve of the transmission-mode cathode and the parameters of the surface barri- er are obtained from the fitting. the theoretical curve is in good agreement with the experimental curve. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | 国家自然科学基金（批准号：6 678 43）,江西省自然科学基金（批准号：gjj 8298）资助项目 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/15975]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zou Jijun,Yang Zhi,Qiao Jianliang,et al. Effect of Surface Potential Barrier on the Electron Energy Distribution of NEA Photocathodes[J]. 半导体学报,2008,29(8):1479-1483. |
| APA | Zou Jijun,Yang Zhi,Qiao Jianliang,Chang Benkang,&Zeng Yiping.(2008).Effect of Surface Potential Barrier on the Electron Energy Distribution of NEA Photocathodes.半导体学报,29(8),1479-1483. |
| MLA | Zou Jijun,et al."Effect of Surface Potential Barrier on the Electron Energy Distribution of NEA Photocathodes".半导体学报 29.8(2008):1479-1483. |
入库方式： OAI收割
来源：半导体研究所
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