Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD
文献类型：期刊论文
| 作者 | Zhao Degang ; Wang Yutian; Jiang Desheng; Duan Ruifei; Ma Zhifang; Sun Baojuan; Zhu Jianjun; Zhang Shuming; Duan Ruifei
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| 刊名 | 半导体学报
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| 出版日期 | 2008 |
| 卷号 | 29期号:7页码:1242-1245 |
| 中文摘要 | high-resolution x-ray diffraction has been employed to investigate the diffuse scattering in a (0001) oriented gan epitaxial film grown on sapphire substrate. the analysis reveals that defect clusters are present in gan films and their concentration increases as the density of threading dislocations increases. meanwhile, the mean radius of these defect clusters shows a reverse tendency. this result is explained by the effect of clusters preferentially forming around dislocations, which act as effective sinks for the segregation of point defects. the electric mobility is found to decrease as the cluster concentration increases. |
| 英文摘要 | high-resolution x-ray diffraction has been employed to investigate the diffuse scattering in a (0001) oriented gan epitaxial film grown on sapphire substrate. the analysis reveals that defect clusters are present in gan films and their concentration increases as the density of threading dislocations increases. meanwhile, the mean radius of these defect clusters shows a reverse tendency. this result is explained by the effect of clusters preferentially forming around dislocations, which act as effective sinks for the segregation of point defects. the electric mobility is found to decrease as the cluster concentration increases.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:00:44导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:00:44z (gmt). no. of bitstreams: 1 3858.pdf: 374312 bytes, checksum: 7fbb470fa497ef9f7a994735c28f0262 (md5) previous issue date: 2008; 国家自然科学基金(批准号:6 5 6 1,6 476 21,6 576 3),国家重点基础研究发展规划(批准号:2 7cb9367 )资助项目; institute of semiconductors, chinese academy of sciences;research and development center for semiconductor lighting, institute of semiconductors, chinese academy of sciences |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家自然科学基金(批准号:6 5 6 1,6 476 21,6 576 3),国家重点基础研究发展规划(批准号:2 7cb9367 )资助项目 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16021]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao Degang,Wang Yutian,Jiang Desheng,et al. Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD[J]. 半导体学报,2008,29(7):1242-1245. |
| APA | Zhao Degang.,Wang Yutian.,Jiang Desheng.,Duan Ruifei.,Ma Zhifang.,...&Duan Ruifei.(2008).Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD.半导体学报,29(7),1242-1245. |
| MLA | Zhao Degang,et al."Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD".半导体学报 29.7(2008):1242-1245. |
入库方式： OAI收割
来源：半导体研究所
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