A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator
文献类型：期刊论文
| 作者 | Wang Wei; Wang Wei; Pan Jiaoqing
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2008 |
| 卷号 | 29期号:5页码:898-902 |
| 中文摘要 | a compact and stable three-port optical gate has been successfully fabricated by monolithically integrating asimple photodiode and an electroabsorption modulator. the gate shows an excellent dc logic "and" function with differ-ent load resistors. its dynamical characteristics without packaging have also been measured. we observed a dynamic extinc-tion ratio of over 7db with a 950ω load resistor and a 7mw control light power at 622mbit/s. |
| 学科主题 | 半导体器件 |
| 收录类别 | CSCD |
| 资助信息 | national natural science foundation of china (no. 9 4 1 25),国家自然科学基金资助项目(批准号:9 4 1 25) |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16081]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Wei,Wang Wei,Pan Jiaoqing. A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator[J]. 半导体学报,2008,29(5):898-902. |
| APA | Wang Wei,Wang Wei,&Pan Jiaoqing.(2008).A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator.半导体学报,29(5),898-902. |
| MLA | Wang Wei,et al."A Novel Optical Gate by Integration of a Photodiode and an Electroabsorption Modulator".半导体学报 29.5(2008):898-902. |
入库方式： OAI收割
来源：半导体研究所
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