Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | Shi Huiling ; Ma Xiaoyu ; Hu Like ; Chong Feng |
| 刊名 | 半导体学报
 |
| 出版日期 | 2008 |
| 卷号 | 29期号:1页码:12-16 |
| 中文摘要 | zno thin films were grown on gaas （001） substrates by metal-organic chemical vapor deposition （mocvd） at low temperatures ranging from 100 to 400℃. dezn and 1-12 o were used as the zinc precursor and oxygen precursor, respectively. the effects of the growth temperatures on the growth characteristics and optical properties of zno films were investigated. the x-ray diffraction measurement （xrd） results indicated that all the thin films were grown with highly c- axis orientation. the surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. although there was no evidence of epitaxial growth, the scanning electron microscopy （sem） image of zno film grown at 400℃ revealed the presence of zno microcrystallines with closed packed hexagon structure. the photoluminescence spectrum at room temperature showed only bright band-edge （3. 33ev） emissions with little or no deep-level e- mission related to defects. |
| 英文摘要 | zno thin films were grown on gaas （001） substrates by metal-organic chemical vapor deposition （mocvd） at low temperatures ranging from 100 to 400℃. dezn and 1-12 o were used as the zinc precursor and oxygen precursor, respectively. the effects of the growth temperatures on the growth characteristics and optical properties of zno films were investigated. the x-ray diffraction measurement （xrd） results indicated that all the thin films were grown with highly c- axis orientation. the surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. although there was no evidence of epitaxial growth, the scanning electron microscopy （sem） image of zno film grown at 400℃ revealed the presence of zno microcrystallines with closed packed hexagon structure. the photoluminescence spectrum at room temperature showed only bright band-edge （3. 33ev） emissions with little or no deep-level e- mission related to defects.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:01:13导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:01:13z (gmt). no. of bitstreams: 1 3946.pdf: 550619 bytes, checksum: ce324972edd5072209f1bfdb215e122f (md5) previous issue date: 2008; institute of semiconductors, chinese academy of sciences |
| 学科主题 | 半导体器件 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16143]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shi Huiling,Ma Xiaoyu,Hu Like,et al. Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition[J]. 半导体学报,2008,29(1):12-16. |
| APA | Shi Huiling,Ma Xiaoyu,Hu Like,&Chong Feng.(2008).Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition.半导体学报,29(1),12-16. |
| MLA | Shi Huiling,et al."Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition".半导体学报 29.1(2008):12-16. |
入库方式： OAI收割
来源：半导体研究所
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