AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band
文献类型：期刊论文
| 作者 | Yao Xiaojiang ; Li Bin ; Chen Yanhu ; Chen Xiaojuan ; Wei Ke ; Li Chengzhan ; Luo Weijun ; WANG Xiaoliang ; Liu Dan ; Liu Guoguo ; Liu Xinyu |
| 刊名 | 半导体学报
 |
| 出版日期 | 2007 |
| 卷号 | 28期号:4页码:514-517 |
| 中文摘要 | a power amplifier mic with power combining based on algan/gan hemts was fabricated and measured. the amplifier consists of four 10×120μm transistors. a wilkinson splitters and combining were used to divide and combine the power. by biasing the amplifier at v_(ds) =40v, i(ds)= 0. 9a, a maximum cw output power of 41. 4dbm with a maximum power added efficiency (pae) of 32. 54% and a power combine efficiency of 69% was achieved at 5. 4ghz. |
| 英文摘要 | a power amplifier mic with power combining based on algan/gan hemts was fabricated and measured. the amplifier consists of four 10×120μm transistors. a wilkinson splitters and combining were used to divide and combine the power. by biasing the amplifier at v_(ds) =40v, i(ds)= 0. 9a, a maximum cw output power of 41. 4dbm with a maximum power added efficiency (pae) of 32. 54% and a power combine efficiency of 69% was achieved at 5. 4ghz.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:01:50导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:01:50z (gmt). no. of bitstreams: 1 4072.pdf: 311640 bytes, checksum: d2b74d38625ae5342c3dcdf1a2234917 (md5) previous issue date: 2007; 国家重点基础研究发展计划,中国科学院重点创新工程资助项目; institute of microelectronics, chinese academy of sciences;longrui microelectronic corporation;institute of semiconductors, chinese academy of sciences |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | 国家重点基础研究发展计划,中国科学院重点创新工程资助项目 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16317]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yao Xiaojiang,Li Bin,Chen Yanhu,et al. AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band[J]. 半导体学报,2007,28(4):514-517. |
| APA | Yao Xiaojiang.,Li Bin.,Chen Yanhu.,Chen Xiaojuan.,Wei Ke.,...&Liu Xinyu.(2007).AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band.半导体学报,28(4),514-517. |
| MLA | Yao Xiaojiang,et al."AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band".半导体学报 28.4(2007):514-517. |
入库方式： OAI收割
来源：半导体研究所
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