Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures
文献类型：期刊论文
| 作者 | Han Weihua
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2007 |
| 卷号 | 28期号:4页码:500-506 |
| 中文摘要 | a reproducible terahertz (thz) photocurrent was observed at low temperatures in a schottky wrap gate single electron transistor with a normal-incident of a ch_3oh gas laser with the frequency 2. 54thz.the change of source-drain current induced by thz photons shows that a satellite peak is generated beside the resonance peak. thz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak. this indicates that the satellite peak exactly results from the thz photon-assisted tunneling. both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of thz response. |
| 英文摘要 | a reproducible terahertz (thz) photocurrent was observed at low temperatures in a schottky wrap gate single electron transistor with a normal-incident of a ch_3oh gas laser with the frequency 2. 54thz.the change of source-drain current induced by thz photons shows that a satellite peak is generated beside the resonance peak. thz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak. this indicates that the satellite peak exactly results from the thz photon-assisted tunneling. both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of thz response.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:01:51导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:01:51z (gmt). no. of bitstreams: 1 4073.pdf: 517750 bytes, checksum: 0c9b624d6068576b3443589385849933 (md5) previous issue date: 2007; 国家自然科学基金资助项目; research center of engineering for semiconductor integrated technology,institute of semiconductors, chinese academy of sciences;research center for integrated quantum electronics, hokkaido university |
| 学科主题 | 微电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家自然科学基金资助项目 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16319]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han Weihua. Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures[J]. 半导体学报,2007,28(4):500-506. |
| APA | Han Weihua.(2007).Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures.半导体学报,28(4),500-506. |
| MLA | Han Weihua."Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures".半导体学报 28.4(2007):500-506. |
入库方式： OAI收割
来源：半导体研究所
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