Structural and Optical Performance of GaN Thick Film Grown by HVPE
文献类型：期刊论文
| 作者 | Duan Ruifei ; Liu Zhe; Duan Ruifei; Wei Tongbo
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2007 |
| 卷号 | 28期号:1页码:19-23 |
| 中文摘要 | thick gan films were grown on gan/sapphire template in a vertical hvpe reactor. various material characterization techniques,including afm, sem, xrd, rbs/channeling, cl, pl, and xps, were used to characterize these gan epitaxial films. it was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the hvpe gan despite the high growth rate. a few hexagonal pits appeared on the surface, which have strong light emission. after being etched in molten koh, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. an epd of only 8 ×10~6cm~(-2) shows that the gan film has few dislocations. both xrd and rbs channeling indicate the high quality of the gan thick films. sharp band-edge emission with a full width at half maximum（fwhm）of 67mev was observed, while the yellow and infrared emissions were also found. these emissions are likely caused by native defects and c and o impurities. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | 国家高技术研究发展计划资助项目 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16381]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Duan Ruifei,Liu Zhe,Duan Ruifei,et al. Structural and Optical Performance of GaN Thick Film Grown by HVPE[J]. 半导体学报,2007,28(1):19-23. |
| APA | Duan Ruifei,Liu Zhe,Duan Ruifei,&Wei Tongbo.(2007).Structural and Optical Performance of GaN Thick Film Grown by HVPE.半导体学报,28(1),19-23. |
| MLA | Duan Ruifei,et al."Structural and Optical Performance of GaN Thick Film Grown by HVPE".半导体学报 28.1(2007):19-23. |
入库方式： OAI收割
来源：半导体研究所
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