Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD
文献类型：期刊论文
| 作者 | Liu Xingfang ; Zhao Yongmei
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2007 |
| 卷号 | 28期号:1页码:1-4 |
| 中文摘要 | 50mm 3c-sic epilayers are grown on （100） and （111） si substrates in a newly developed horizontal lowpressure hot-wall cvd reactor under different growth pressures and flow rates of h_2 carrier gas. the structure,electrical properties, and thickness uniformity of the 3c-sic epilayers are investigated by x-ray diffraction （xrd） ,sheet resistance measurement, and spectroscopic ellipsometry. xrd patterns show that the 3c-sic films have excellent crystallinity. the narrowest full widths at half maximum of the sic（200） and （111） peaks are 0.41° and 0.21°, respectively. the best electrical uniformity of the 50mm 3c-sic films obtained by sheet resistance measurement is 2.15%. a σ/mean value of ± 5.7% in thickness uniformity is obtained. |
| 英文摘要 | 50mm 3c-sic epilayers are grown on （100） and （111） si substrates in a newly developed horizontal lowpressure hot-wall cvd reactor under different growth pressures and flow rates of h_2 carrier gas. the structure,electrical properties, and thickness uniformity of the 3c-sic epilayers are investigated by x-ray diffraction （xrd） ,sheet resistance measurement, and spectroscopic ellipsometry. xrd patterns show that the 3c-sic films have excellent crystallinity. the narrowest full widths at half maximum of the sic（200） and （111） peaks are 0.41° and 0.21°, respectively. the best electrical uniformity of the 50mm 3c-sic films obtained by sheet resistance measurement is 2.15%. a σ/mean value of ± 5.7% in thickness uniformity is obtained.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:02:03导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:02:03z (gmt). no. of bitstreams: 1 4105.pdf: 331412 bytes, checksum: 94345766cfd50fa9d5c283e2b693665c (md5) previous issue date: 2007; institute of semiconductors, chinese academy of sciences |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16383]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu Xingfang,Zhao Yongmei. Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD[J]. 半导体学报,2007,28(1):1-4. |
| APA | Liu Xingfang,&Zhao Yongmei.(2007).Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD.半导体学报,28(1),1-4. |
| MLA | Liu Xingfang,et al."Uniformity Investigation in 3C-SiC Epitaxial Layers Grown on Si Substrates by Horizontal Hot-Wall CVD".半导体学报 28.1(2007):1-4. |
入库方式： OAI收割
来源：半导体研究所
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