A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT
文献类型：期刊论文
| 作者 | Liu Wei
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2007 |
| 卷号 | 28期号:3页码:332-336 |
| 中文摘要 | a technology for the monolithic integration of resonant tunneling diodes (rtds) and high electron mobility transistors (hemts) is developed. molecular beam epitaxy is used to grow an rtd on a hemt structure on gaas substrate. the rtd has a room temperature peak-to-valley ratio of 5.2:1 with a peak current density of 22.5ka/cm~2. the hemt has a 1μm gate length with a-1v threshold voltage. a logic circuit called a monostableto-bistable transition logic element (mobile) circuit is developed. the experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2ghz. |
| 学科主题 | 半导体物理 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16397]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu Wei. A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT[J]. 半导体学报,2007,28(3):332-336. |
| APA | Liu Wei.(2007).A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT.半导体学报,28(3),332-336. |
| MLA | Liu Wei."A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT".半导体学报 28.3(2007):332-336. |
入库方式： OAI收割
来源：半导体研究所
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