High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing
文献类型：期刊论文
| 作者 | Xin Wei ; Jun Wang; Jun Wang
|
| 刊名 | chinese optics letters
 |
| 出版日期 | 2006 |
| 卷号 | 4期号:1页码:27-29 |
| 中文摘要 | the layer structure of gainp/algainp quantum well laser diodes (lds) was grown on gaas substrate using low-pressure metalorganic chemical vapor deposition (lp-mocvd) technique. in order to improve the catastrophic optical damage (cod) level of devices, a nonabsorbing window (naw), which was based on zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 celsius degree for 20 minutes. the largest energy blue shift of 189.1 mev was observed in the window regions at 580 celsius degree. when the blue shift was 24.7 mev at 480 celsius degree, the cod power for the window ld was 86.7% higher than the conventional ld. |
| 英文摘要 | the layer structure of gainp/algainp quantum well laser diodes (lds) was grown on gaas substrate using low-pressure metalorganic chemical vapor deposition (lp-mocvd) technique. in order to improve the catastrophic optical damage (cod) level of devices, a nonabsorbing window (naw), which was based on zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. zn diffusions were respectively carried out at 480, 500, 520, 540, and 580 celsius degree for 20 minutes. the largest energy blue shift of 189.1 mev was observed in the window regions at 580 celsius degree. when the blue shift was 24.7 mev at 480 celsius degree, the cod power for the window ld was 86.7% higher than the conventional ld.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:02:17导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:02:17z (gmt). no. of bitstreams: 1 4125.pdf: 257493 bytes, checksum: c152edf5540ec1a9fed683af4b1a7db4 (md5) previous issue date: 2006; the research was supported by the national natural science foundation of china; institute of semiconductors, chinese academy of sciences |
| 学科主题 | 半导体器件 |
| 收录类别 | CSCD |
| 资助信息 | the research was supported by the national natural science foundation of china |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16415]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xin Wei,Jun Wang,Jun Wang. High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing[J]. chinese optics letters,2006,4(1):27-29. |
| APA | Xin Wei,Jun Wang,&Jun Wang.(2006).High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing.chinese optics letters,4(1),27-29. |
| MLA | Xin Wei,et al."High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing".chinese optics letters 4.1(2006):27-29. |
入库方式： OAI收割
来源：半导体研究所
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