Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power
文献类型：期刊论文
| 作者 | Xiaohong Yang ; Qin Han; Zhichuan Niu; Yingqiang Xu; Hongling Peng; Yingqiang Xu
|
| 刊名 | chinese optics letters
 |
| 出版日期 | 2006 |
| 卷号 | 4期号:7页码:413-415 |
| 中文摘要 | continuous wave operation of a semiconductor laser diode based on five stacks of inas quantum dots (qds) embedded within strained ingaas quantum wells as an active region is demonstrated. at room temperature, 355-mw output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. by optimizing the molecular beam epitaxy (mbe) growth conditions, the qd density per layer is raised to 4*10^(10) cm^(-2). the laser keeps lasing at ground state until the temperature reaches 65 celsius degree. |
| 英文摘要 | continuous wave operation of a semiconductor laser diode based on five stacks of inas quantum dots (qds) embedded within strained ingaas quantum wells as an active region is demonstrated. at room temperature, 355-mw output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. by optimizing the molecular beam epitaxy (mbe) growth conditions, the qd density per layer is raised to 4*10^(10) cm^(-2). the laser keeps lasing at ground state until the temperature reaches 65 celsius degree.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:02:29导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:02:29z (gmt). no. of bitstreams: 1 4158.pdf: 175484 bytes, checksum: efe22fdb728b238bffee8948a0981782 (md5) previous issue date: 2006; this work was supported by the major state key basic research program,the national "863" program of china,the national natural science foundation of china; instituter of smienductor, chinese academy of scinces |
| 学科主题 | 半导体物理 |
| 资助信息 | this work was supported by the major state key basic research program,the national "863" program of china,the national natural science foundation of china |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16469]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xiaohong Yang,Qin Han,Zhichuan Niu,et al. Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power[J]. chinese optics letters,2006,4(7):413-415. |
| APA | Xiaohong Yang,Qin Han,Zhichuan Niu,Yingqiang Xu,Hongling Peng,&Yingqiang Xu.(2006).Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power.chinese optics letters,4(7),413-415. |
| MLA | Xiaohong Yang,et al."Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power".chinese optics letters 4.7(2006):413-415. |
入库方式： OAI收割
来源：半导体研究所
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