Analysis of Si/GaAs Bonding Stresses with the Finite Element Method
文献类型：期刊论文
| 作者 | Cao Yulian ; Chen Lianghui; Wu Xuming
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2006 |
| 卷号 | 27期号:11页码:1906-1910 |
| 中文摘要 | in conjunction with ansys, we use the finite element method to analyze the bonding stresses of si/gaas. we also apply a numerical model to investigate a contour map and the distribution of normal stress,shearing stress,and peeling stress,taking into full consideration the thermal expansion coefficient as a function of temperature. novel bonding structures are proposed for reducing the effect of thermal stress as compared with conventional structures. calculations show the validity of this new structure. |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | state key development program for basic research of china |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16483]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Cao Yulian,Chen Lianghui,Wu Xuming. Analysis of Si/GaAs Bonding Stresses with the Finite Element Method[J]. 半导体学报,2006,27(11):1906-1910. |
| APA | Cao Yulian,Chen Lianghui,&Wu Xuming.(2006).Analysis of Si/GaAs Bonding Stresses with the Finite Element Method.半导体学报,27(11),1906-1910. |
| MLA | Cao Yulian,et al."Analysis of Si/GaAs Bonding Stresses with the Finite Element Method".半导体学报 27.11(2006):1906-1910. |
入库方式： OAI收割
来源：半导体研究所
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