An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices
文献类型：期刊论文
| 作者 | Chen Shaowu
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2006 |
| 卷号 | 27期号:11页码:1894-1899 |
| 中文摘要 | we present an all-e-beam lithography (ebl) process for the patterning of photonic crystal waveguides.the whole device structures are exposed in two steps. holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size (less than 10nm). with the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled.the second step is the exposure of the access waveguides at a larger step size (about 30nm) to improve the scan speed of the ebl. the influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. it is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose. |
| 英文摘要 | we present an all-e-beam lithography (ebl) process for the patterning of photonic crystal waveguides.the whole device structures are exposed in two steps. holes constituting the photonic crystal lattice and defects are first exposed with a small exposure step size (less than 10nm). with the introduction of the additional proximity effect to compensate the original proximity effect, the shape, size, and position of the holes can be well controlled.the second step is the exposure of the access waveguides at a larger step size (about 30nm) to improve the scan speed of the ebl. the influence of write-field stitching error can be alleviated by replacing the original waveguides with tapered waveguides at the joint of adjacent write-fields. it is found experimentally that a higher exposure efficiency is achieved with a larger step size;however,a larger step size requires a higher dose.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:02:33导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:02:33z (gmt). no. of bitstreams: 1 4172.pdf: 1315001 bytes, checksum: ee16a2ed638b597e0216b755a3c99354 (md5) previous issue date: 2006; national natural science foundation of china; institute of semiconductors, chinese academy of sciences |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | national natural science foundation of china |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16485]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen Shaowu. An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices[J]. 半导体学报,2006,27(11):1894-1899. |
| APA | Chen Shaowu.(2006).An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices.半导体学报,27(11),1894-1899. |
| MLA | Chen Shaowu."An All-E-Beam Lithography Process for the Patterning of 2D Photonic Crystal Waveguide Devices".半导体学报 27.11(2006):1894-1899. |
入库方式： OAI收割
来源：半导体研究所
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