Progress in bulk GaN growth
文献类型：期刊论文
| 作者 | Xu, K(徐科) ; Wang, JF(王建峰); Ren, GQ(任国强)
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| 刊名 | CHINESE PHYSICS B
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| 出版日期 | 2015 |
| 卷号 | 24期号:6页码:16 |
| 关键词 | nitride semiconductor bulk GaN hydride vapor phase epitaxy (HVPE) dislocation |
| 通讯作者 | Xu, K (徐科) |
| 英文摘要 | Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of GaN film. The growth mechanisms of GaN by Na-flux and ammonothermal methods are compared with those of HVPE. The mechanical behaviors of dislocation in bulk GaN are investigated through nano-indentation and high-space resolution surface photo-voltage spectroscopy. In the last part, the progress in growing some devices on GaN substrate by homo-epitaxy is introduced. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3360]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_测试分析平台 |
| 推荐引用方式 GB/T 7714 | Xu, K,Wang, JF,Ren, GQ. Progress in bulk GaN growth[J]. CHINESE PHYSICS B,2015,24(6):16. |
| APA | Xu, K,Wang, JF,&Ren, GQ.(2015).Progress in bulk GaN growth.CHINESE PHYSICS B,24(6),16. |
| MLA | Xu, K,et al."Progress in bulk GaN growth".CHINESE PHYSICS B 24.6(2015):16. |
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