Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation
文献类型：期刊论文
| 作者 | Zhang, ZL(张志利); Fu, K(付凯); Deng, XG(邓旭光); Zhang, XD(张晓东); Fan, YM(范亚明); Sun, SC(孙世闯); Song, L(宋亮); Xing, Z(邢政); Huang, W(黄伟); Yu, GH(于国浩) |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2015 |
| 卷号 | 36期号:11页码:4 |
| 关键词 | AlGaN/GaN high electron mobility transistor (HEMT) standard fluorine ion implantation normally off |
| 通讯作者 | Zhang, ZL (张志利) |
| 英文摘要 | This letter presents a fabrication technology of enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using 10 keV fluorine ion implantation. An 8 nm low-pressure chemical vapor deposition silicon nitride layer was deposited on the AlGaN as gate dielectric and energy-absorbing layer that slows down the high energy (10 keV) fluorine ions to reduce the implantation damage. The E-mode MIS-HEMTs exhibit a threshold voltage as high as +3.3 V with a maximum drain current over 200 mA/mm (250 mA/mm for depletion-mode MIS-HEMTs) and a high on/off current ratio of 10(9). Meanwhile, the E-mode MIS-HEMT dynamic R-ON is only 1.53 times larger than the static R-ON after off-state V-DS stress of 500 V. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3280]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Zhang, ZL,Fu, K,Deng, XG,et al. Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation[J]. IEEE ELECTRON DEVICE LETTERS,2015,36(11):4. |
| APA | Zhang, ZL.,Fu, K.,Deng, XG.,Zhang, XD.,Fan, YM.,...&Zhang, BS.(2015).Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation.IEEE ELECTRON DEVICE LETTERS,36(11),4. |
| MLA | Zhang, ZL,et al."Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation".IEEE ELECTRON DEVICE LETTERS 36.11(2015):4. |
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