16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator
文献类型：期刊论文
| 作者 | Zhang, ZL(张志利); Yu, GH(于国浩); Zhang, XD(于国浩); Tan, SX; Wu, DD(吴冬东); Fu, K(付凯); Huang, W(黄伟); Cai, Y(蔡勇); Zhang, BS(张宝顺)
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| 刊名 | ELECTRONICS LETTERS
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| 出版日期 | 2015 |
| 卷号 | 51期号:15页码:2 |
| 通讯作者 | Fu, K (付凯) |
| 英文摘要 | An AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) on Si substrate was obtained with 18 nm silicon nitride (Si3N4) grown by low-pressure chemical vapour deposition (LPCVD) as the gate insulator. The D-mode MIS-HEMT shows a high I-dss of 16.8 A at V-g = 3 V, a high breakdown voltage (BV) of 600 V and a low-specific on-resistance of 2.3 m Omega.cm(2). The power device figure of merit (FOM = BV2/R-on,R-sp) is calculated as 157 MW.cm(-2). The good insulation effects of LPCVD-Si3N4 were also demonstrated by the low gate leakage current of 154 nA at V-ds = 600 V and V-gs = -14 V. Furthermore, an E-mode device was realised by a low-voltage silicon metal-oxide-semiconductor field-effect transistor in series; the V-th was determined to be 2.6 V. The high I-dss, low-specific on-resistance, high BV and positive V-th show the potential and advantages of GaN MIS-HEMTs for power switching applications. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3336]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Zhang, ZL,Yu, GH,Zhang, XD,et al. 16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator[J]. ELECTRONICS LETTERS,2015,51(15):2. |
| APA | Zhang, ZL.,Yu, GH.,Zhang, XD.,Tan, SX.,Wu, DD.,...&Zhang, BS.(2015).16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator.ELECTRONICS LETTERS,51(15),2. |
| MLA | Zhang, ZL,et al."16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator".ELECTRONICS LETTERS 51.15(2015):2. |
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