Engineering of forming-free resistive switching characteristics in ZrO2 films
文献类型：期刊论文
| 作者 | Du, G(杜刚); Li, T(李涛); Wang, C(王超); Fang, B(方彬); Zhang, BS(张宝顺) ; Zeng, ZM(曾中明)
|
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2015 |
| 卷号 | 48期号:22页码:6 |
| 关键词 | resistive random access memory (RRAM) forming-free oxygen vacancy thermal annealing |
| 通讯作者 | Du, G (杜刚) |
| 英文摘要 | The variation of forming-free resistive switching (RS) characteristics modulated by thermal annealing was investigated in ZrO2 films fabricated by electron beam evaporation. A typical forming-free behavior with pristine resistance comparable to that of the high resistance state (HRS) was observed in the as-deposited devices. Whereas, the resistance was further reduced to a state with initial resistance even lower than the low resistance state (LRS) after annealing in N-2 ambient and a larger resistance ratio was verified in the annealed devices. Both devices exhibited stable bipolar RS without any forming step, which has great potential for memory applications. A possible RS mechanism associated with adjusting of oxygen vacancy formation and migration was proposed to explain these distinct forming-free behaviors. It is expected that controllable forming-free characteristics and improved device performance may be obtained by further optimizing the distribution and density of oxygen vacancies via post-annealing. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3356]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Du, G,Li, T,Wang, C,et al. Engineering of forming-free resistive switching characteristics in ZrO2 films[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2015,48(22):6. |
| APA | Du, G,Li, T,Wang, C,Fang, B,Zhang, BS,&Zeng, ZM.(2015).Engineering of forming-free resistive switching characteristics in ZrO2 films.JOURNAL OF PHYSICS D-APPLIED PHYSICS,48(22),6. |
| MLA | Du, G,et al."Engineering of forming-free resistive switching characteristics in ZrO2 films".JOURNAL OF PHYSICS D-APPLIED PHYSICS 48.22(2015):6. |
入库方式： OAI收割
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。