Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy
文献类型：期刊论文
| 作者 | Fang, B(方彬); Zhang, X; Zhang, S(); Zeng, ZM(曾中明) ; Cai, JW
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| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2015 |
| 卷号 | 5期号:6页码:6 |
| 通讯作者 | Zeng, ZM (曾中明) |
| 英文摘要 | We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices. (C) 2015 Author(s). |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-02-26 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3359]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Fang, B,Zhang, X,Zhang, S,et al. Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy[J]. AIP ADVANCES,2015,5(6):6. |
| APA | Fang, B,Zhang, X,Zhang, S,Zeng, ZM,&Cai, JW.(2015).Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy.AIP ADVANCES,5(6),6. |
| MLA | Fang, B,et al."Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy".AIP ADVANCES 5.6(2015):6. |
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