GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric
文献类型：期刊论文
| 作者 | Hua, MY; Liu, C; Yang, S; Liu, SH; Fu, K(付凯); Dong, ZH(董志华); Cai, Y(蔡勇); Zhang, BS(张宝顺) ; Chen, KJ
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| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2015 |
| 卷号 | 36期号:5页码:3 |
| 关键词 | Gallium nitride MIS-HEMT LPCVD silicon nitride gate dielectric |
| 通讯作者 | Hua, MY |
| 英文摘要 | In this letter, silicon nitride (SiNx) film deposited at 780 degrees C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiNx exhibit improved gate dielectric performance than the plasma enhanced chemical vapor deposition-SiNx, including smaller forward and reverse gate leakage, and higher forward gate breakdown voltage. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2016-02-26 |
| 源URL | [http://ir.sinano.ac.cn/handle/332007/3386]  |
| 专题 | 苏州纳米技术与纳米仿生研究所_纳米加工公共平台 |
| 推荐引用方式 GB/T 7714 | Hua, MY,Liu, C,Yang, S,et al. GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric[J]. IEEE ELECTRON DEVICE LETTERS,2015,36(5):3. |
| APA | Hua, MY.,Liu, C.,Yang, S.,Liu, SH.,Fu, K.,...&Chen, KJ.(2015).GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric.IEEE ELECTRON DEVICE LETTERS,36(5),3. |
| MLA | Hua, MY,et al."GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric".IEEE ELECTRON DEVICE LETTERS 36.5(2015):3. |
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