Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics
文献类型：期刊论文
| 作者 | Chen Lianghui ; Zhao Degang; Zhu Jianjun; Zhang Shuming
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2006 |
| 卷号 | 27期号:3页码:499-505 |
| 中文摘要 | time-dependent thermal simulation of ridge-geometry ingan laser diodes is carried out with a two-dimensional model. a high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. the temperature step is thought to have a strong influence on the characteristics of the laser diodes. time-resolved measurements of light-current curves,spectra, and the far-field pattern of the ingan laser diodes under pulsed operation are performed. the results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency. |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家高技术研究发展计划资助项目 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16679]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen Lianghui,Zhao Degang,Zhu Jianjun,et al. Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics[J]. 半导体学报,2006,27(3):499-505. |
| APA | Chen Lianghui,Zhao Degang,Zhu Jianjun,&Zhang Shuming.(2006).Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics.半导体学报,27(3),499-505. |
| MLA | Chen Lianghui,et al."Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics".半导体学报 27.3(2006):499-505. |
入库方式： OAI收割
来源：半导体研究所
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