Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloy
文献类型：期刊论文
| 作者 | Zhang Y
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2006 |
| 卷号 | 27期号:3页码:397-402 |
| 中文摘要 | the transitions of e0 ,e0 ＋a0, and e＋ in dilute gaas（1-x） nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. resonant raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute gaasn alloys rather than some localized exciton emissions in the gaasn alloys. the results show that the nitrogen-induced e e＋ and e0 ＋ a0 transitions in gaasn alloys intersect at a nitrogen content of about 0.16%. it is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence. |
| 英文摘要 | the transitions of e0 ,e0 ＋a0, and e＋ in dilute gaas（1-x） nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. resonant raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute gaasn alloys rather than some localized exciton emissions in the gaasn alloys. the results show that the nitrogen-induced e e＋ and e0 ＋ a0 transitions in gaasn alloys intersect at a nitrogen content of about 0.16%. it is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:03:19导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:03:19z (gmt). no. of bitstreams: 1 4299.pdf: 453898 bytes, checksum: 5fc1a9e4cda1541d947c98860843371c (md5) previous issue date: 2006; 国家自然科学基金,国家重点基础研究专项基金,江苏省自然科学基金,香港rgc基金,美国ode基金资助项目; institute of semiconductors,chinese academy of sciences;department of physics, hong kong university of science and technology;national renewable energy laboratory;department of electrical and computer engineering,university of california at san diego |
| 学科主题 | 半导体物理 |
| 收录类别 | CSCD |
| 资助信息 | 国家自然科学基金,国家重点基础研究专项基金,江苏省自然科学基金,香港rgc基金,美国ode基金资助项目 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16685]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang Y. Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloy[J]. 半导体学报,2006,27(3):397-402. |
| APA | Zhang Y.(2006).Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloy.半导体学报,27(3),397-402. |
| MLA | Zhang Y."Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloy".半导体学报 27.3(2006):397-402. |
入库方式： OAI收割
来源：半导体研究所
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