Growth orientation dependence of Si doping in GaAsN
文献类型：期刊论文
| 作者 | Han XX(韩修训)1,2 ; Dong C(董琛)1; Feng, Qiang3; Ohshita, Yoshio4; Yamaguchi, Masafumi4
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| 刊名 | Journal of Applied Physics
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| 出版日期 | 2015 |
| 卷号 | 117期号:5页码:055706(1-4) |
| ISSN号 | 0021-8979 |
| 通讯作者 | 韩修训 |
| 英文摘要 | The incorporation of Si in GaAsN alloys grown simultaneously on (100), (311)A, (311)B, and (211)B GaAs substrates by the chemical beam epitaxy has been investigated. The decrease in electron concentration with the increasing N composition suggests the occurrence of N and Si interaction, whereas the interaction exhibits evidently different extent depending on the growth orientation. Combined with the secondary ion mass spectrometry and photoluminescence measurements, it is revealed that (311)B and (211)B are the promising substrate orientations to reduce the N-Si passivation and improve n-type Si doping in GaAsN over a wider N composition range. A surface bonding model is utilized to explain the plane polarity dependent incorporation behaviors of Si and N. |
| 学科主题 | 材料科学与物理化学 |
| 收录类别 | SCI |
| 资助信息 | the National Natural Science Foundation of China (Grant No. 61376066);“Top Hundred Talents Program” of Chinese Academy of Sciences;the New Energy Development Organization (NEDO) under the ministry of Economy, Trade and Industry, Japan |
| 语种 | 英语 |
| WOS记录号 | WOS:000349613600066 |
| 源URL | [http://210.77.64.217/handle/362003/19028]  |
| 专题 | 兰州化学物理研究所_清洁能源化学与材料实验室 兰州化学物理研究所_固体润滑国家重点实验室 |
| 作者单位 | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, Lab Clean Energy Chem & Mat, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 3.Chinese Acad Sci, Optoelect Dept, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China 4.Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan |
| 推荐引用方式 GB/T 7714 | Han XX,Dong C,Feng, Qiang,et al. Growth orientation dependence of Si doping in GaAsN[J]. Journal of Applied Physics,2015,117(5):055706(1-4). |
| APA | Han XX,Dong C,Feng, Qiang,Ohshita, Yoshio,&Yamaguchi, Masafumi.(2015).Growth orientation dependence of Si doping in GaAsN.Journal of Applied Physics,117(5),055706(1-4). |
| MLA | Han XX,et al."Growth orientation dependence of Si doping in GaAsN".Journal of Applied Physics 117.5(2015):055706(1-4). |
入库方式： OAI收割
来源：兰州化学物理研究所
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