采用直流等离子体化学气相沉积(dc－PECVD) 技术，以甲烷为前驱体，在单晶硅表面制备了含氢类富勒烯(FL－C∶H) 薄膜． 简化了含氢类富勒烯(FL－C∶ H) 薄膜的脉冲偏压协助等离子体化学气相制备过程(mc－PECVD)，通过高分辨率透射电镜和拉曼光谱确定了FL－C∶H 薄膜的微观结构和薄膜内的富勒烯含量; 通过纳米压痕和往复摩擦试验对比了两种方法制备的FL－C∶H 与传统的DLC 薄膜的硬度及摩擦性能．结果表明: 与用脉冲偏压协助方案制备的含氢类富勒烯薄膜相比，直流方案制备的FL－C∶H薄膜具有相似的微观结构，更优异的机械特性及摩擦学性能，同时该薄膜表现出对载荷、频率和相对湿度的低敏感性．

Hydrogenated fullerene－like carbon (FL－C∶H) films were deposited on Si (100) substrates by a direct current plasma enhanced chemical vapor deposition(dc－PECVD) technique using pure CH₄ as feedstock. Simplify the hydrogen fullerene (FL－C: H) films prepared by pulsed bias － assisted plasma chemical vapor process (mc－PECVD). The microstructures and the FL content of the FL－C∶ H films were characterized by high transmission electron microscopy and Raman spectrum. The mechanical properties and friction behaviors of the films were investigated by using a Nano－indenter and a ball－ on－disk tester． Results show that compared with the hydrogen－containing fullerene －like filmsprepared by pulse bias－assisted method, FL－C∶ H films prepared by dc method that exhibited a similar icrostructure, superior excellent mechanical properties and tribological performance, and these films showed low sensitivity to load , frequency and relative humidity.