Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications
文献类型：期刊论文
| 作者 | Xue Chunlai ; Cheng Buwen
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2006 |
| 卷号 | 27期号:1页码:9-13 |
| 中文摘要 | a multi-finger structure power sige hbt device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. the dc current gain β is 144.25. the b-c junction breakdown voltage reaches 9v with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. though our data are influenced by large additional rf probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1ghz and a cut-off frequency fτ of 1.8ghz at a dc bias point of ic=10ma and vce = 2.5v. |
| 英文摘要 | a multi-finger structure power sige hbt device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. the dc current gain β is 144.25. the b-c junction breakdown voltage reaches 9v with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. though our data are influenced by large additional rf probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1ghz and a cut-off frequency fτ of 1.8ghz at a dc bias point of ic=10ma and vce = 2.5v.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:03:33导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:03:33z (gmt). no. of bitstreams: 1 4333.pdf: 359686 bytes, checksum: 83afd3e17ccbb97adfd9e35e4ab3a4e0 (md5) previous issue date: 2006; 国家高技术研究发展计划,国家重点基础研究发展规划,国家自然科学基金; institute of semiconductors chinese academy of sciences |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家高技术研究发展计划,国家重点基础研究发展规划,国家自然科学基金 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16753]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xue Chunlai,Cheng Buwen. Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications[J]. 半导体学报,2006,27(1):9-13. |
| APA | Xue Chunlai,&Cheng Buwen.(2006).Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications.半导体学报,27(1),9-13. |
| MLA | Xue Chunlai,et al."Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications".半导体学报 27.1(2006):9-13. |
入库方式： OAI收割
来源：半导体研究所
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