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Solid source growth of Si oxide nanowires promoted by carbon nanotubes

文献类型：期刊论文

作者Lu, Congxiang1,2; Liu, Wen-wen2; Wang, Xingli2; Li XC(李小成)3; Tan, Chong Wei1,2; Tay, Beng Kang1,2; Coquet, Philippe1
刊名Applied Surface Science
出版日期2014
卷号314页码:119-123
关键词Silicon Nanowire Carbon nanotube Solid-liquid-solid mechanism
ISSN号0169-4332
通讯作者Tay, Beng Kang
英文摘要We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs serve as a scaffold, which helps the dispersion of catalysts for SiONWs and also provides space for hydrogen which boosts the diffusion of Si atoms and hence formation of SiONWs. As the result, a three dimensional (3D) hybrid network of densely packed SiONWs and CNTs can be produced rapidly.
学科主题材料科学与物理化学
收录类别SCI
资助信息of Nanyang Research Scholarship from Nanyang Technological University, Singapore and research fund from Si-COE project
语种英语
WOS记录号WOS:000341464100016
源URL[http://210.77.64.217/handle/362003/19281]  
专题兰州化学物理研究所_清洁能源化学与材料实验室
作者单位1.Nanyang Technol Univ, CINTRA, CNRS, NTU,THALES, Singapore 637553, Singapore
2.Nanyang Technol Univ, Sch Elect & Elect Engn, Novitas, Nanoelect Ctr Excellence, Singapore 639798, Singapore
3.Chinese Acad Sci, Lanzhou Inst Chem Phys, Lab Clean Energy Chem & Mat, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Lu, Congxiang,Liu, Wen-wen,Wang, Xingli,et al. Solid source growth of Si oxide nanowires promoted by carbon nanotubes[J]. Applied Surface Science,2014,314:119-123.
APA Lu, Congxiang.,Liu, Wen-wen.,Wang, Xingli.,Li XC.,Tan, Chong Wei.,...&Coquet, Philippe.(2014).Solid source growth of Si oxide nanowires promoted by carbon nanotubes.Applied Surface Science,314,119-123.
MLA Lu, Congxiang,et al."Solid source growth of Si oxide nanowires promoted by carbon nanotubes".Applied Surface Science 314(2014):119-123.

入库方式： OAI收割

来源：兰州化学物理研究所

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