1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes
文献类型：期刊论文
| 作者 | Liu Yu; Liu Yu |
| 刊名 | Chinese Optics Letters
 |
| 出版日期 | 2005 |
| 卷号 | 3期号:8页码:466-468 |
| 中文摘要 | In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 Celsius degrees, respectively. |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | This work was supported by the National '863' Program of China,the National '973' Program of China |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16761]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu Yu,Liu Yu. 1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes[J]. Chinese Optics Letters,2005,3(8):466-468. |
| APA | Liu Yu,&Liu Yu.(2005).1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes.Chinese Optics Letters,3(8),466-468. |
| MLA | Liu Yu,et al."1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes".Chinese Optics Letters 3.8(2005):466-468. |
入库方式： OAI收割
来源：半导体研究所
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