Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes
文献类型：期刊论文
| 作者 | Xu Yingqiang ; Yang Xiaohong; Xu Yingqiang; Han Qin; Niu Zhichuan; Wu Donghai; Peng Hongling
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| 刊名 | 半导体学报
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:9页码:1860-1864 |
| 中文摘要 | Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained. |
| 学科主题 | 半导体物理 |
| 资助信息 | 国家自然科学基金,国家高技术研究发展计划,国家重点基础研究专项资助项目 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16791]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu Yingqiang,Yang Xiaohong,Xu Yingqiang,et al. Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes[J]. 半导体学报,2005,26(9):1860-1864. |
| APA | Xu Yingqiang.,Yang Xiaohong.,Xu Yingqiang.,Han Qin.,Niu Zhichuan.,...&Peng Hongling.(2005).Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes.半导体学报,26(9),1860-1864. |
| MLA | Xu Yingqiang,et al."Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes".半导体学报 26.9(2005):1860-1864. |
入库方式： OAI收割
来源：半导体研究所
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