Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films
文献类型：期刊论文
| 作者 | Wang Xiaofeng ; Huang Fengyi ; Sun Guosheng ; Wang Lei ; Zhao Wanshun ; Zeng Yiping ; Li Haiou ; Duan Xiaofeng |
| 刊名 | 半导体学报
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:9页码:1681-1687 |
| 中文摘要 | one group of sic films are grown on silicon-on-insulator （soi） substrates with a series of silicon-overlayer thickness. raman scattering spectroscopy measurement clearly indicates that a systematic trend of residual stress reduction as the silicon over-layer thickness decreases for the soi substrates. strain relaxation in the sic epilayer is explained by force balance approach and near coincidence lattice model. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | 国家高技术研究发展计划资助项目 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16793]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Xiaofeng,Huang Fengyi,Sun Guosheng,et al. Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films[J]. 半导体学报,2005,26(9):1681-1687. |
| APA | Wang Xiaofeng.,Huang Fengyi.,Sun Guosheng.,Wang Lei.,Zhao Wanshun.,...&Duan Xiaofeng.(2005).Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films.半导体学报,26(9),1681-1687. |
| MLA | Wang Xiaofeng,et al."Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-SiC Films".半导体学报 26.9(2005):1681-1687. |
入库方式： OAI收割
来源：半导体研究所
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