X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD
文献类型：期刊论文
| 作者 | Wang Cuimei
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:10页码:1865-1870 |
| 中文摘要 | the growth,fabrication,and characterization of 0.2μm gate-length algan/gan hemts,with a high mobility gan thin layer as a channel,grown on (0001) sapphire substrates by mocvd,are described.the unintentionally doped 2.5μm thick gan epilayers grown with the same conditions as the gan channel have a room temperature electron mobility of 741cm2/(v·s) at an electron concentration of 1.52×1016 cm-3.the resistivity of the thick gan buffer layer is greater than 108ω·cm at room temperature.the 50mm hemt wafers grown on sapphire substrates show an average sheet resistance of 440.9ω/□ with uniformity better than 96%.devices of 0.2μm×40μm gate periphery exhibit a maximum extrinsic transconductance of 250ms/mm and a current gain cutoff frequency of77ghz.the algan/gan hemts with 0.8mm gate width display a total output power of 1.78w (2.23w/mm) and a linear gain of 13.3db at 8ghz.the power devices also show a saturated current density as high as 1.07a/mm at a gate bias of 0.5v. |
| 英文摘要 | the growth,fabrication,and characterization of 0.2μm gate-length algan/gan hemts,with a high mobility gan thin layer as a channel,grown on (0001) sapphire substrates by mocvd,are described.the unintentionally doped 2.5μm thick gan epilayers grown with the same conditions as the gan channel have a room temperature electron mobility of 741cm2/(v·s) at an electron concentration of 1.52×1016 cm-3.the resistivity of the thick gan buffer layer is greater than 108ω·cm at room temperature.the 50mm hemt wafers grown on sapphire substrates show an average sheet resistance of 440.9ω/□ with uniformity better than 96%.devices of 0.2μm×40μm gate periphery exhibit a maximum extrinsic transconductance of 250ms/mm and a current gain cutoff frequency of77ghz.the algan/gan hemts with 0.8mm gate width display a total output power of 1.78w (2.23w/mm) and a linear gain of 13.3db at 8ghz.the power devices also show a saturated current density as high as 1.07a/mm at a gate bias of 0.5v.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:03:56导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:03:56z (gmt). no. of bitstreams: 1 4397.pdf: 519677 bytes, checksum: bcd8981836120e5215a3d9b79bc0ad42 (md5) previous issue date: 2005; institute of semiconductors, chinese academy of sciences;institute of microelectronics, chinese academy of sciences |
| 学科主题 | 微电子学 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16865]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Cuimei. X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD[J]. 半导体学报,2005,26(10):1865-1870. |
| APA | Wang Cuimei.(2005).X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD.半导体学报,26(10),1865-1870. |
| MLA | Wang Cuimei."X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD".半导体学报 26.10(2005):1865-1870. |
入库方式： OAI收割
来源：半导体研究所
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