Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers
文献类型：期刊论文
| 作者 | Yu Lijuan
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:10页码:1898-1904 |
| 中文摘要 | quantum dot gain spectra based on harmonic oscillator model are calculated including and excluding excitons. the effects of non-equilibrium distributions are considered at low temperatures. the variations of threshold current density in a wide temperature range are analyzed and the negative characteristic temperature and oscillatory characteristic temperature appearing in that temperature range are discussed. also,the improvement of quantum dot lasers＇ performance is investigated through vertical stacking and p-type doping and the optimal dot density, which corresponds to minimal threshold current density,is calculated. |
| 英文摘要 | quantum dot gain spectra based on harmonic oscillator model are calculated including and excluding excitons. the effects of non-equilibrium distributions are considered at low temperatures. the variations of threshold current density in a wide temperature range are analyzed and the negative characteristic temperature and oscillatory characteristic temperature appearing in that temperature range are discussed. also,the improvement of quantum dot lasers＇ performance is investigated through vertical stacking and p-type doping and the optimal dot density, which corresponds to minimal threshold current density,is calculated.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:03:57导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:03:57z (gmt). no. of bitstreams: 1 4400.pdf: 420453 bytes, checksum: d170ae948a086530840e3acd8d6d5c3f (md5) previous issue date: 2005; 国家高技术研究发展计划,国家自然科学基金; institute of semiconductors, chinese academy of sciences |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家高技术研究发展计划,国家自然科学基金 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16871]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yu Lijuan. Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers[J]. 半导体学报,2005,26(10):1898-1904. |
| APA | Yu Lijuan.(2005).Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers.半导体学报,26(10),1898-1904. |
| MLA | Yu Lijuan."Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers".半导体学报 26.10(2005):1898-1904. |
入库方式： OAI收割
来源：半导体研究所
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