Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs
文献类型：期刊论文
| 作者 | NING Jin ; LIU Xingfang
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| 刊名 | 人工晶体学报
 |
| 出版日期 | 2005 |
| 卷号 | 34期号:6页码:1006-1010 |
| 中文摘要 | homoepitaxial growth of4h-sic on off-oriented si-face （0001） 4h-sic substrates was performed at 1500℃ by using the step controlled epitaxy. ti/4h-sic schottky barrier diodes （sbds） with blocking voltage over lkv have been made on an undoped epilayer with 32μm in thick and 2-5 × 10^15 cm^-3 in carrier density. the diode rectification ratio of forward to reverse （defined at ± 1v） is over 107 at room temperature and over 10^2 at 538k. their electrical characteristics were studied by the current-voltage measurements in the temperature range from 20 to 265 ℃. the ideality factor and schottky barrier height obtained at room temperature are 1.33 and 0. 905ev, respectively. the sbds have on-state current density of 150a/cm^2 at a forward voltage drop of about 2.0v. the specific on-resistance for the rectifier is found to be as 7.9mω · cm^2 and its variation with temperature is t^2.0. |
| 英文摘要 | homoepitaxial growth of4h-sic on off-oriented si-face （0001） 4h-sic substrates was performed at 1500℃ by using the step controlled epitaxy. ti/4h-sic schottky barrier diodes （sbds） with blocking voltage over lkv have been made on an undoped epilayer with 32μm in thick and 2-5 × 10^15 cm^-3 in carrier density. the diode rectification ratio of forward to reverse （defined at ± 1v） is over 107 at room temperature and over 10^2 at 538k. their electrical characteristics were studied by the current-voltage measurements in the temperature range from 20 to 265 ℃. the ideality factor and schottky barrier height obtained at room temperature are 1.33 and 0. 905ev, respectively. the sbds have on-state current density of 150a/cm^2 at a forward voltage drop of about 2.0v. the specific on-resistance for the rectifier is found to be as 7.9mω · cm^2 and its variation with temperature is t^2.0.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:04:13导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:04:13z (gmt). no. of bitstreams: 1 4429.pdf: 205822 bytes, checksum: a37fb9d9ebcc2316b6f9566c0b74db4a (md5) previous issue date: 2005; institute of semiconductors, chinese academy of sciences |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16913]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | NING Jin,LIU Xingfang. Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs[J]. 人工晶体学报,2005,34(6):1006-1010. |
| APA | NING Jin,&LIU Xingfang.(2005).Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs.人工晶体学报,34(6),1006-1010. |
| MLA | NING Jin,et al."Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs".人工晶体学报 34.6(2005):1006-1010. |
入库方式： OAI收割
来源：半导体研究所
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