Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs
文献类型:期刊论文
作者 | NING Jin![]() ![]() |
刊名 | 人工晶体学报
![]() |
出版日期 | 2005 |
卷号 | 34期号:6页码:1006-1010 |
中文摘要 | homoepitaxial growth of4h-sic on off-oriented si-face (0001) 4h-sic substrates was performed at 1500℃ by using the step controlled epitaxy. ti/4h-sic schottky barrier diodes (sbds) with blocking voltage over lkv have been made on an undoped epilayer with 32μm in thick and 2-5 × 10^15 cm^-3 in carrier density. the diode rectification ratio of forward to reverse (defined at ± 1v) is over 107 at room temperature and over 10^2 at 538k. their electrical characteristics were studied by the current-voltage measurements in the temperature range from 20 to 265 ℃. the ideality factor and schottky barrier height obtained at room temperature are 1.33 and 0. 905ev, respectively. the sbds have on-state current density of 150a/cm^2 at a forward voltage drop of about 2.0v. the specific on-resistance for the rectifier is found to be as 7.9mω · cm^2 and its variation with temperature is t^2.0. |
英文摘要 | homoepitaxial growth of4h-sic on off-oriented si-face (0001) 4h-sic substrates was performed at 1500℃ by using the step controlled epitaxy. ti/4h-sic schottky barrier diodes (sbds) with blocking voltage over lkv have been made on an undoped epilayer with 32μm in thick and 2-5 × 10^15 cm^-3 in carrier density. the diode rectification ratio of forward to reverse (defined at ± 1v) is over 107 at room temperature and over 10^2 at 538k. their electrical characteristics were studied by the current-voltage measurements in the temperature range from 20 to 265 ℃. the ideality factor and schottky barrier height obtained at room temperature are 1.33 and 0. 905ev, respectively. the sbds have on-state current density of 150a/cm^2 at a forward voltage drop of about 2.0v. the specific on-resistance for the rectifier is found to be as 7.9mω · cm^2 and its variation with temperature is t^2.0.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:04:13导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:04:13z (gmt). no. of bitstreams: 1 4429.pdf: 205822 bytes, checksum: a37fb9d9ebcc2316b6f9566c0b74db4a (md5) previous issue date: 2005; institute of semiconductors, chinese academy of sciences |
学科主题 | 半导体材料 |
收录类别 | CSCD |
语种 | 英语 |
公开日期 | 2010-11-23 ; 2011-04-29 |
源URL | [http://ir.semi.ac.cn/handle/172111/16913] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | NING Jin,LIU Xingfang. Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs[J]. 人工晶体学报,2005,34(6):1006-1010. |
APA | NING Jin,&LIU Xingfang.(2005).Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs.人工晶体学报,34(6),1006-1010. |
MLA | NING Jin,et al."Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs".人工晶体学报 34.6(2005):1006-1010. |
入库方式: OAI收割
来源:半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。