LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications
文献类型：期刊论文
| 作者 | LIU Xingfang
|
| 刊名 | 人工晶体学报
 |
| 出版日期 | 2005 |
| 卷号 | 34期号:6页码:982-985 |
| 中文摘要 | this paper presents the development of lpcvd growth of 3c-sic thin films grown on si mesas and thermally oxidized sio2 masks over si with an area of 150 × 100μm^2 and sio2/si substrates. the growth has been performed via chemical vapor deposition using sih4 and c2h4 precursor gases with carrier gas of h2. 3c-sic films on these substrates were characterized by optical microscopy, x-ray diffraction （ xrd ）, x-ray photoelectron spectroscopy （ xps ）, scanning electron microscopy （sem） and room temperature hall effect measurements. it is shown that there were no voids at the interface between 3c-sic and sio2. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | special funds for major state basic research project |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16915]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LIU Xingfang. LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications[J]. 人工晶体学报,2005,34(6):982-985. |
| APA | LIU Xingfang.(2005).LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications.人工晶体学报,34(6),982-985. |
| MLA | LIU Xingfang."LPCVD Growth of 3C-SiC on Si Mesas and SiO2/Si Substrates for MEMS Applications".人工晶体学报 34.6(2005):982-985. |
入库方式： OAI收割
来源：半导体研究所
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