Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors
文献类型：期刊论文
| 作者 | Jin Peng ; Xu Bo
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:8页码:1519-1523 |
| 中文摘要 | the wet oxidation of algaas with high al content in a distributed bragg reflectors （dbr） is studied by scanning electron microscopy （sem） and transmission electron microscopy （tem）. some voids distribute along the oxide/gaas interfaces due to the stress induced by the wet oxidation of the algaas layers. these voids decrease the shrinkage of the al2o3 layers to 8% instead of the theoretical 20% when compared to the unoxidized algaas layers. with the extension of oxidation time, the reactants are more completely transported to the front interface and the products are more completely transported out along the porous interfaces. as a result,the oxide quality is better. |
| 学科主题 | 半导体材料 |
| 资助信息 | 国家重点基础研究发展计划,国家自然科学基金 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16923]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jin Peng,Xu Bo. Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors[J]. 半导体学报,2005,26(8):1519-1523. |
| APA | Jin Peng,&Xu Bo.(2005).Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors.半导体学报,26(8),1519-1523. |
| MLA | Jin Peng,et al."Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors".半导体学报 26.8(2005):1519-1523. |
入库方式： OAI收割
来源：半导体研究所
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