RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content
文献类型：期刊论文
| 作者 | Liu Jian
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:6页码:1116-1120 |
| 中文摘要 | a si doped algan/gan hemt structure with high al content (x= 44%) in the barrier layer is grown on sapphire substrate by rf-mbe. the structural and electrical properties of the heterostructure are investigated by the triple axis x-ray diffraction and van der pauw-hall measurement, respectively. the observed prominent bragg peaks of the gan and algan and the hall results show that the structure is of high quality with smooth interface.fabricated and characterized. better dc characteristics, maximum drain current of 1.0a/mm and extrinsic transconductance of 218ms/mm are obtained when compared with hemts fabricated using structures with lower al mole fraction in the algan barrier layer. the results suggest that the high al content in the algan barrier layer is promising in improving material electrical properties and device performance. |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | 中国科学院知识创新工程,国家自然科学基金,国家重点基础研究发展规划,国家高技术研究发展计划 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/16969]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu Jian. RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content[J]. 半导体学报,2005,26(6):1116-1120. |
| APA | Liu Jian.(2005).RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content.半导体学报,26(6),1116-1120. |
| MLA | Liu Jian."RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content".半导体学报 26.6(2005):1116-1120. |
入库方式： OAI收割
来源：半导体研究所
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