Optical Pr operties of GaNAs and GaAsSb Semiconductors
文献类型：期刊论文
| 作者 | Luo Xiangdong ; Xu Zhongying |
| 刊名 | 中国科学院研究生院学报
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:5页码:645-655 |
| 中文摘要 | under short pulse laser excitation, it has been observed, for the first time, a new high-energy photoluminescence emission from ganx as1- x/gaas sqws. this new emission has totally different optical properties compared with the localized exciton transition in ganx as1-x, and is attributed to the recombination of delocalized excitons in qws. at the same time, a competition process between localized and delocalized exciton emissions in ganx as1-x/gaas quantum wells is observed in the temperaturedependent pl spectra under the short pulse excitation. this competition process for the first time, reveals the physical origin of the temperature-induced s-shaped pl peak shift, which was often reported in the disordered alloy semiconductor system under continuous-wave excitation and puzzled people for a long time. we have also investigated a set of ganx as1- x samples with small nitrogen composition( x ＜ 1% )by pl, and time-resolved pl. after the pl dependence on temperature and excitation power and pl dynamics were measured, the new pl peak was identified as an intrinsic transition of alloy, rather than n-related bound states. this is the first observation in pl, showing that alloy state exists in ganx as1- x materials even when n composition is smaller than 0.1%. finally by selective excitation,both type-ⅰ and type-ⅱ transitions were observed simultaneously in gaas1-xsbx/gaas sqws for the first time. |
| 学科主题 | 半导体材料 |
| 资助信息 | supported by the special funds of the major state basic research project,the national natural science foundation of china,the natural science foundation of jiangsu |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17011]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Luo Xiangdong,Xu Zhongying. Optical Pr operties of GaNAs and GaAsSb Semiconductors[J]. 中国科学院研究生院学报,2005,22(5):645-655. |
| APA | Luo Xiangdong,&Xu Zhongying.(2005).Optical Pr operties of GaNAs and GaAsSb Semiconductors.中国科学院研究生院学报,22(5),645-655. |
| MLA | Luo Xiangdong,et al."Optical Pr operties of GaNAs and GaAsSb Semiconductors".中国科学院研究生院学报 22.5(2005):645-655. |
入库方式： OAI收割
来源：半导体研究所
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