Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate
文献类型：期刊论文
| 作者 | Wang Yutian
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| 刊名 | 半导体学报
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:4页码:645-650 |
| 中文摘要 | gan buffer layers (thickness ～60nm) grown on gaas(001) by low-temperature mocvd are investigated by x-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of gan on gaas(001) substrates. in addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the x-ray diffraction pole figures. moreover, { 111 } q scans with χ at 55° reveal the abnormal distribution of bragg diffractions. the extra intensity maxima in the pole fig ures shows that the process of twinning plays a dominating role during the growth process. it is suggested that the polarity of { 111 } facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of gan growth on gaas(001) substrates. it is proposed that twinning is prone to occurring on { 111 } b, n-terminated facets. |
| 英文摘要 | gan buffer layers (thickness ～60nm) grown on gaas(001) by low-temperature mocvd are investigated by x-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of gan on gaas(001) substrates. in addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the x-ray diffraction pole figures. moreover, { 111 } q scans with χ at 55° reveal the abnormal distribution of bragg diffractions. the extra intensity maxima in the pole fig ures shows that the process of twinning plays a dominating role during the growth process. it is suggested that the polarity of { 111 } facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of gan growth on gaas(001) substrates. it is proposed that twinning is prone to occurring on { 111 } b, n-terminated facets.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:04:51导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:04:52z (gmt). no. of bitstreams: 1 4523.pdf: 650185 bytes, checksum: dd73ff2543c4bd0ccbb9bf9e81b2ff56 (md5) previous issue date: 2005; 国家博士后科学基金,国家自然科学基金; institute of semiconductor and information technology, tongji university;institute of semiconductors , chinese academy of sciences;beijing synchrotron radiation facility, institute of high energy physics, chinese academy of sciences |
| 学科主题 | 半导体器件 |
| 收录类别 | CSCD |
| 资助信息 | 国家博士后科学基金,国家自然科学基金 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17081]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Yutian. Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate[J]. 半导体学报,2005,26(4):645-650. |
| APA | Wang Yutian.(2005).Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate.半导体学报,26(4),645-650. |
| MLA | Wang Yutian."Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate".半导体学报 26.4(2005):645-650. |
入库方式： OAI收割
来源：半导体研究所
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