1.55μm Laser Diode Monolithically Integrated with Spot-Size Converter Using Conventional Process
文献类型：期刊论文
| 作者 | Wang Wei; Wang Wei |
| 刊名 | 半导体学报
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:3页码:443-447 |
| 中文摘要 | A novel 1.55μm laser diode with spot-size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double-core structure is employed.For the spot-size converter,a buried ridge double-core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0.35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14.89°×18.18°,respectively,resulting in low-coupling losses with a cleaved optical fiber (3dB loss). |
| 英文摘要 | A novel 1.55μm laser diode with spot-size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double-core structure is employed.For the spot-size converter,a buried ridge double-core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0.35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14.89°×18.18°,respectively,resulting in low-coupling losses with a cleaved optical fiber (3dB loss).; 于2010-11-23批量导入; zhangdi于2010-11-23 13:05:00导入数据到SEMI-IR的IR; Made available in DSpace on 2010-11-23T05:05:00Z (GMT). No. of bitstreams: 1 4548.pdf: 61056 bytes, checksum: a009716e182e88a33dff27aeb87659e6 (MD5) Previous issue date: 2005; 国家自然科学基金重大研究计划,国家重点基础研究发展计划; National Research Center for Optoelectronic Technology，Institute of Semiconductors,Chinese Academy of Sciences |
| 学科主题 | 半导体材料 |
| 收录类别 | CSCD |
| 资助信息 | 国家自然科学基金重大研究计划,国家重点基础研究发展计划 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17119]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Wei,Wang Wei. 1.55μm Laser Diode Monolithically Integrated with Spot-Size Converter Using Conventional Process[J]. 半导体学报,2005,26(3):443-447. |
| APA | Wang Wei,&Wang Wei.(2005).1.55μm Laser Diode Monolithically Integrated with Spot-Size Converter Using Conventional Process.半导体学报,26(3),443-447. |
| MLA | Wang Wei,et al."1.55μm Laser Diode Monolithically Integrated with Spot-Size Converter Using Conventional Process".半导体学报 26.3(2005):443-447. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。