Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission
文献类型：期刊论文
| 作者 | Niu Zhichuan
|
| 刊名 | semiconductor photonics and technology
 |
| 出版日期 | 2005 |
| 卷号 | 11期号:2页码:78-80 |
| 中文摘要 | the time-resolved photoluminescence and steady photoluminescence (trpl and pl) spectra on self-assembled inas/gaas quantum dots (qds) are investigated. by depositing gaas/inas short period superlattices (sls), 1. 48 μtm emission is obtained at room temperature. temperature dependent pl measurements show that the pl intensity of the emission is very steady. it decays only to half as the temperature increases from 15 k to room temperature, while at the same time, the intensity of the other emission decreases by a factor of 5 orders of magnitude. these two emissions are attributed to large-size qds and short period superlattices (sls), respectively. large-size qds are easier to capture and confine carriers,which benefits the lifetime of pl, and therefore makes the emission intensity insensitive to the temperature. |
| 学科主题 | 半导体物理 |
| 收录类别 | CSCD |
| 资助信息 | natural science foundation of fujian province |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17121]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Niu Zhichuan. Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission[J]. semiconductor photonics and technology,2005,11(2):78-80. |
| APA | Niu Zhichuan.(2005).Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission.semiconductor photonics and technology,11(2),78-80. |
| MLA | Niu Zhichuan."Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission".semiconductor photonics and technology 11.2(2005):78-80. |
入库方式： OAI收割
来源：半导体研究所
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