Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer
文献类型：期刊论文
| 作者 | Niu Zhichuan
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:2页码:466-468 |
| 中文摘要 | we investigate effects of annealing on magnetic properties of a thick (ga,mn)as layer, and find a dramatic increase of the curie temperature from 65 to 115 k by postgrowth annealing for a 500-nm (ga,mn)as layer. auger electron spectroscopy measurements suggest that the increase of the curie temperature is mainly due to diffusion of mn interstitial to the free surface. the double-crystal x-ray diffraction patterns show that the lattice constant of (ga,mn)as decreases with increasing annealing temperature. as a result, the annealing induced reduction of the lattice constant is mainly attributed to removal of mn interstitial. |
| 英文摘要 | we investigate effects of annealing on magnetic properties of a thick (ga,mn)as layer, and find a dramatic increase of the curie temperature from 65 to 115 k by postgrowth annealing for a 500-nm (ga,mn)as layer. auger electron spectroscopy measurements suggest that the increase of the curie temperature is mainly due to diffusion of mn interstitial to the free surface. the double-crystal x-ray diffraction patterns show that the lattice constant of (ga,mn)as decreases with increasing annealing temperature. as a result, the annealing induced reduction of the lattice constant is mainly attributed to removal of mn interstitial.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:05:01导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:05:01z (gmt). no. of bitstreams: 1 4551.pdf: 401979 bytes, checksum: 857a6e99ff4c412d0eba01eac0df544d (md5) previous issue date: 2005; supported by the national natural science foundaiton of china,special funds for major state basic research project of china; institute of semiconductors, chinese academy of sciences, po box 912;school of physics, peking university |
| 学科主题 | 半导体物理 |
| 收录类别 | CSCD |
| 资助信息 | supported by the national natural science foundaiton of china,special funds for major state basic research project of china |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17125]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Niu Zhichuan. Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer[J]. chinese physics letters,2005,22(2):466-468. |
| APA | Niu Zhichuan.(2005).Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer.chinese physics letters,22(2),466-468. |
| MLA | Niu Zhichuan."Effect of Annealing on Structural and Magnetic Properties of a Thick (Ga,Mn)As Layer".chinese physics letters 22.2(2005):466-468. |
入库方式： OAI收割
来源：半导体研究所
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