Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes
文献类型：期刊论文
| 作者 | Chen Lianghui ; Zhang Shuming; Zhu Jianjun; Zhao Degang
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:2页码:414-417 |
| 中文摘要 | studies on first gan-based blue-violet laser diodes(lds) in china mainland are reported.high quality gan materials as well as gan-based quantum wells laser structures are grown by metal-organic chemical vapor deposition method.the x-ray double-crystal diffraction rocking curve measurements show the full-width half maximum of 180" and 185" for (0002) symmetric reflection and (10(-1)2) skew reflection,respectively.a room temperature mobility of 850cm2/(v·s) is obtained for a 3μm thick gan film.gain guided and ridge geometry waveguide laser diodes are fabricated with cleaved facet mirrors at room temperature under pulse current injection.the lasing wavelength is 405.9nm.a threshold current density of 5ka/cm2 and an output light power over 100mw are obtained for ridge geometry waveguide laser diodes. |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家高技术研究发展计划资助项目 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17129]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen Lianghui,Zhang Shuming,Zhu Jianjun,et al. Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes[J]. 半导体学报,2005,26(2):414-417. |
| APA | Chen Lianghui,Zhang Shuming,Zhu Jianjun,&Zhao Degang.(2005).Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes.半导体学报,26(2),414-417. |
| MLA | Chen Lianghui,et al."Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes".半导体学报 26.2(2005):414-417. |
入库方式： OAI收割
来源：半导体研究所
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