Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors
文献类型：期刊论文
| 作者 | Cheng Buwen ; Zuo Yuhua
|
| 刊名 | 半导体学报
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:2页码:271-275 |
| 中文摘要 | A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes. |
| 英文摘要 | A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:05:06导入数据到SEMI-IR的IR; Made available in DSpace on 2010-11-23T05:05:06Z (GMT). No. of bitstreams: 1 4561.pdf: 235568 bytes, checksum: e6e8fd44730f7e49f1f60f77481ed71d (MD5) Previous issue date: 2005; 国家重点基础研究发展规划,国家自然科学基金,国家高技术研究发展计划; Institute of Semiconductors, Chinese Academy of Sciences;Beijing Chemical Plant |
| 学科主题 | 光电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家重点基础研究发展规划,国家自然科学基金,国家高技术研究发展计划 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17143]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Cheng Buwen,Zuo Yuhua. Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors[J]. 半导体学报,2005,26(2):271-275. |
| APA | Cheng Buwen,&Zuo Yuhua.(2005).Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors.半导体学报,26(2),271-275. |
| MLA | Cheng Buwen,et al."Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors".半导体学报 26.2(2005):271-275. |
入库方式： OAI收割
来源：半导体研究所
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