Design and Realization of Resonant Tunneling Diodes with New Material Structure
文献类型：期刊论文
| 作者 | Wang Jianlin ; Wang Liangchen ; Zeng Yiping ; Liu Zhongli ; Yang Fuhua ; Bai Yunxia |
| 刊名 | 半导体学报
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:1页码:1-5 |
| 中文摘要 | a new material structure with al0.22ga(>. 78 as/ino.i5 gao.ss as/gaas emitter spacer layer and gaas/ino.15-gao.8ii as/gaas well for resonant tunneling diodes is designed and the corresponding device is fabricated. rtds dc characteristics are measured at room temperature. peak-to-valley current ratio and the available current density for rtds at room temperature are computed. analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of rtds. |
| 学科主题 | 微电子学 |
| 收录类别 | CSCD |
| 资助信息 | 国家重点基础研究专项经费,中国科学院资助项目 |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17207]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Jianlin,Wang Liangchen,Zeng Yiping,et al. Design and Realization of Resonant Tunneling Diodes with New Material Structure[J]. 半导体学报,2005,26(1):1-5. |
| APA | Wang Jianlin,Wang Liangchen,Zeng Yiping,Liu Zhongli,Yang Fuhua,&Bai Yunxia.(2005).Design and Realization of Resonant Tunneling Diodes with New Material Structure.半导体学报,26(1),1-5. |
| MLA | Wang Jianlin,et al."Design and Realization of Resonant Tunneling Diodes with New Material Structure".半导体学报 26.1(2005):1-5. |
入库方式： OAI收割
来源：半导体研究所
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