Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs
文献类型：期刊论文
| 作者 | Wang Yonggang ; Ma xiaoyu ; Zhong Bin ; Wang Desong ; Zhang Qiulin ; Feng Baohua |
| 刊名 | chinese optics letters
 |
| 出版日期 | 2004 |
| 卷号 | 2期号:1页码:31-33 |
| 中文摘要 | we reported a passive q-switched diode laser pumped yb:yag microchip laser with an ion-implanted semi-insulating gaas wafer. the wafer was implanted with 400-kev as^(+) in the concentration of 10^(16) ions/cm^(2). to decrease the non-saturable loss, we annealed the ion-implanted gaas at 500 oc for 5 minutes and coated both sides of the ion-implanted gaas with antireflection (ar) and highreflection (hr) films, respectively. using gaas wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse. |
| 英文摘要 | we reported a passive q-switched diode laser pumped yb:yag microchip laser with an ion-implanted semi-insulating gaas wafer. the wafer was implanted with 400-kev as^(+) in the concentration of 10^(16) ions/cm^(2). to decrease the non-saturable loss, we annealed the ion-implanted gaas at 500 oc for 5 minutes and coated both sides of the ion-implanted gaas with antireflection (ar) and highreflection (hr) films, respectively. using gaas wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:05:37导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:05:37z (gmt). no. of bitstreams: 1 4634.pdf: 161966 bytes, checksum: d380acc8e4e01d8b1e9fcf8328413fb4 (md5) previous issue date: 2004; institute of semiconductors, chinese academy of sciences;institute of physics, chinese academy of sciences |
| 学科主题 | 半导体器件 |
| 收录类别 | CSCD |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 ; 2011-04-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17243]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Yonggang,Ma xiaoyu,Zhong Bin,et al. Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs[J]. chinese optics letters,2004,2(1):31-33. |
| APA | Wang Yonggang,Ma xiaoyu,Zhong Bin,Wang Desong,Zhang Qiulin,&Feng Baohua.(2004).Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs.chinese optics letters,2(1),31-33. |
| MLA | Wang Yonggang,et al."Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs".chinese optics letters 2.1(2004):31-33. |
入库方式： OAI收割
来源：半导体研究所
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