Binding Energy of Biexcitons in GaAs Quantum-Well Wires
文献类型：期刊论文
| 作者 | Liu Jianjun ; Chen Xiaofang ; Li Shushen |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2004 |
| 卷号 | 21期号:11页码:2259-2262 |
| 中文摘要 | the binding energy of a biexciton in gaas quantum-well wires is calculated variationally by use of a two-parameter trial wavefunction and a one-dimensional equivalent potential model. there is no artificial parameter added in our calculation. our results agree fairly well with the previous results. it is found that the binding energies are closely correlative to the size of wire. the binding energy of biexcitons is smaller than that of neutral bound excitons in gaas quantum-well wires when the dopant is located at the centre of the wires. |
| 学科主题 | 半导体物理 |
| 收录类别 | CSCD |
| 资助信息 | hebei natural science foundation under grant,the natural science foundation of hebei educational committee under grant |
| 语种 | 英语 |
| 公开日期 | 2010-11-23 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/17247]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu Jianjun,Chen Xiaofang,Li Shushen. Binding Energy of Biexcitons in GaAs Quantum-Well Wires[J]. chinese physics letters,2004,21(11):2259-2262. |
| APA | Liu Jianjun,Chen Xiaofang,&Li Shushen.(2004).Binding Energy of Biexcitons in GaAs Quantum-Well Wires.chinese physics letters,21(11),2259-2262. |
| MLA | Liu Jianjun,et al."Binding Energy of Biexcitons in GaAs Quantum-Well Wires".chinese physics letters 21.11(2004):2259-2262. |
入库方式： OAI收割
来源：半导体研究所
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